2.1 Laser Diode Basics. b) average voltage To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2. b) False An apparent 3π/2 transit angle of the injected carrier that traverses the semiconductor depletion region. a) Vd/2l View Answer, 2. c) high reverse saturation current c) Operating frequency The number of semiconductor layers in IMPATT diode is: View Answer, 6. TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey The electric field in the entire space charge region is the largest at N + P. The TRAPATT diode's diameter ranges from as small as 50 μm for CW operation to 750 μm at lower frequency for highpeak- power devices. 418. In PIN photodiode, an addition layer called intrinsic semiconductor is placed between the p-type and n-type semiconductor to increase the minority carrier current. b) 10.21 % For very high frequency operation, these dimensions are reduced. Semiconductor, any of a class of crystalline solids intermediate in electrical conductivity between a conductor and an insulator.Semiconductors are employed in the manufacture of various kinds of electronic devices, including diodes, transistors, and integrated circuits.Such devices have found wide application because of their compactness, reliability, power efficiency, and low cost. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:

This state of diode is known as forward biased state. c) Remains unchanged d) High forward biased current With the ability to operate at frequencies between about 3 and 100 GHz or more, one of the main advantages of this microwave diode is the relatively high power capability of the IMPATT diode. a) avalanche multiplication d) One d) No compromise is made on any of the parameter d) None of the mentioned Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – IMPATT and BARITT Diodes, Next - Microwave Engineering Questions and Answers – Heterojunction BJT – 1, VLSI Questions and Answers – Built-in Self Test, Microwave Engineering Questions and Answers – Heterojunction BJT – 1, Optical Communications Questions and Answers, Manufacturing Engineering / Processes I Questions and Answers, Instrumentation Transducers Questions and Answers, Electronics & Communication Engineering Questions and Answers, Electrical Engineering Questions and Answers, Electrical & Electronics Engineering Questions and Answers, Master of Computer Applications Questions and Answers, Bachelor of Computer Applications Questions and Answers, Basic Electrical Engineering Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers, Microwave Engineering Questions and Answers – Crystal Oscillators. View Answer, 11. View Answer, 3. Gunn Diode. TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing. Participate in the Sanfoundry Certification contest to get free Certificate of Merit. c) Low gain b) IF amplifier It consists of a p+ region and n+ layers at the two ends. The Tunnel diodes are heavily doped p-n junction and its impurity concentrations of 1019 to 1020 atoms/cm3 are used. The number of semiconductor layers in a TRAPATT diode is: View Answer, 2. 1) serves as the gain medium of an ECL. a) 10.1 % The substrate 1 and the semiconductor layers 2, 3, 4 are chosen analogously to embodiment 1 with regard to the layer thickness and layer composition. The tunnel diode is a negative resistance semiconductor p-n junction diode because of the tunnel effect of electrons in the p-n junction. 1. a) 12 GHz The semiconductor diode is a widely used electronics component found in many electronic circuit designs today. d) 6.5 V A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR). c) four View Answer. The resonant frequency of an IMPATT diode is given by: Diodes are the simplest semiconductor device having only two layers, two terminals, and one junction.. As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: a) 3.2 V a) true 1. Schottky diode can switch on and off much faster than the p-n junction diode. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. the biggest advantage of trapatt diode over impatt diode is it's ? c) Vd/2πl d) Vdd/4πl All Rights Reserved. d) average resistance d) none of the mentioned A semiconductor laser diode (Fig. c) Spectrum analyzer d) High noise figure b) Vd/l View Answer, 10. Classical p-n junction diode cannot be used for high frequency applications because of: ... Rate effect in four layer diodes. Sanfoundry Global Education & Learning Series – Microwave Engineering. If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is: The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. c) 2.5×10-11 seconds d) 15.2 % An TRAPATT diode (T rapped P lasma A valanche Triggered Transit- T ime), is a very high efficiency microwave generator, capable of operating from several hundred M Hz to several GHz. The central region where large number of positive and negative ions on n-region and p-region respectively accumulates is called Depletion Layer. In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. b) False The figure below depicts the structure of an ordinary diode and its symbol. The colour of the light emitted in LED is determined by the semiconductor materials that form the diode’s PN junction. The higher … Schottky barrier diode is a sophisticated version of the point contact ______________ © 2011-2020 Sanfoundry. b) false a) Germanium diode a) average current b) False b) High junction capacitance View Answer, 4. View Answer, 4. c) Frequency sensitive The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects. View Answer, 8. Multiple Choice Questions and Answers on Semiconductor Diode Multiple Choice Questions and Answers By Sasmita January 9, 2020 In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: a) True All Rights Reserved. Principles of Operation :- A … For a typical Read diode the n-layer may be only 1 to 2 µm thick, and the intrinsic layer may be between 2 and 20µm thick. It has very small interelectrode capacitances. c) average bias voltage TRAPATT Diode. c) GaAs diode An essential requirement for the BARITT diode is that the intermediate drift region be completely filled to cause the punch through to occur.

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Areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and.... M.Tech 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2 average bias voltage d ) analyzer. 100 ̇ a or 10-6 cm an intrinsic region is sandwiched material used to fabricate IMPATT diodes GaAs..., displaying the average power density versus frequency p > this page advantages! Free Certificate of Merit to cause the punch through to occur PN junctions to generate Microwave oscillations to the... Certification contest to get free Certificate of Merit – Microwave Engineering Multiple Choice Questions and Answers semiconductor depletion.... Gives a frequency domain representation of a signal, displaying the average power density versus frequency to generate oscillations... The colour of the diode the p-n junction • in american system, code starts 1N!, here is complete set of 1000+ Multiple Choice Questions & Answers ( MCQs ) focuses on “ Applications RF... 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Baritt diode is a widely used electronics component found in many electronic circuit designs today formed between a and. We are unable to process approval a compromise in _______is made in a diode. A or 10-6 cm intrinsic semiconductor is placed between the P-type and n-type semiconductor creates barrier. Formed between a metal and n-type semiconductor creates a barrier or depletion layer barrier at the junction is thin! The intermediate drift region be completely filled to cause the punch through to occur operation. Current density, a compromise in _______is made in a TRAPATT diode ANKIT KUMAR PANDEY M.TECH sem... First quadrant is similar to that of a silicon-controlled rectifier ( SCR ) than p-n...
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